PART |
Description |
Maker |
M64811AGP M64811AE |
From old datasheet system 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
D1007UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-28V-500MHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
M64884FP M64884E |
From old datasheet system Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
LT1222 LT1222C LT1222CN8 LT1222CS8 LT1222M LT1222M |
From old datasheet system 500MHz, 3nV/Hz, A 10 Operational Amplifier 500MHz Operational Amplifier
|
LINER[Linear Technology]
|
D1218UK |
CAT6 SOL PC PVC WHI 25FT PVC SOLID PATCH CORD 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应60W-12.5V-500MHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
LX5530LQ LX5530 |
InGaP HBT 4.5 - 6.0GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
EIA5060-1S |
5.0-6.0GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA5060-1S |
5.0-6.0GHz 1W Internally Matched Power FET
|
Excelics Semiconductor
|
MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|